| PART |
Description |
Maker |
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M58LR128GT85ZB5 M58LR128GB M58LR128GB85ZB5 M58LR12 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M58LR128GT |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M30L0R7000B0ZAQE M30L0R7000B0ZAQF M30L0R7000B0ZAQT |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36W0R6050T1ZAQE |
64 Mbit (4 Mb 16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 16) PSRAM, multi-chip package
|
意法半导
|
| M36W0R604040B0ZAQE M36W0R604040B0ZAQF M36W0R604040 |
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package
|
Numonyx B.V
|
| M58LR128KB855 M58LR128KB M58LR128KT M58LR128KT855 |
128 or 256 Mbit (隆驴16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M58LR128KC785 M58LR256KC785 M58LR256KC M58LR256KC7 |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
